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IRLBA3803PBF hexfet ? power mosfet logic-level gate drive advanced process technology 175c operating temperature fast switching fully avalanche rated lead-free fifth generation hexfets from international rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard to-220 but can house a considerably larger silicon die. it has increased current handling capability over both the to-220 and the much larger to- 247 package. this makes it ideal to reduce component count in multiparalled to-220 applications, reduce system power dissipation, upgrade existing designs or have to-247 performance in a to-220 outline.
v dss = 30v r ds(on) = 0.005 ? i d = 179a s d g 10/01/10 www.irf.com 1
parameter typ. max. units r jc junction-to-case CCC 0.55 r cs case-to-sink, flat, greased surface 0.5 CCC c/w r ja junction-to-ambient CCC 58 thermal resistance parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 179 i d @ t c = 100c continuous drain current, v gs @ 10v 126 a i dm pulsed drain current 720 p d @t c = 25c power dissipation 270 w linear derating factor 1.8 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy 610 mj i ar avalanche current 71 a e ar repetitive avalanche energy 27 mj dv/dt peak diode recovery d v/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) recommended clip force 20 n c pd - 95263a downloaded from: http:///

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 71a, v gs = 0v t rr reverse recovery time CCC 120 180 ns t j = 25c, i f = 71a q rr reverse recovery charge CCC 450 680 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 71a, di/dt 130a/s, v dd v (br)dss , t j 175c notes: v dd = 15v, starting t j = 25c, l = 180h r g = 25 ? i as = 71a. (see figure 12) pulse width 300s; duty cycle 2% uses irl3803 data and test conditions source-drain ratings and characteristics 179 720 s d g calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to design tip # 93-4 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.052 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.005 v gs = 10v, i d = 71a CCC CCC 0.009 v gs = 4.5v, i d = 59a v gs(th) gate threshold voltage 1.0 CCC v v ds = v gs , i d = 250a g fs forward transconductance 55 CCC CCC s v ds = 25v, i d = 71a CCC CCC 25 a v ds = 30v, v gs = 0v CCC CCC 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 16v gate-to-source reverse leakage CCC CCC -100 na v gs = -16v q g total gate charge CCC CCC 140 i d = 71a q gs gate-to-source charge CCC CCC 41 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 78 v gs = 4.5v, see fig. 6 and 13 t d(on) turn-on delay time CCC 14 CCC v dd = 15v t r rise time CCC 230 CCC i d = 71a t d(off) turn-off delay time CCC 29 CCC r g = 1.3 ? t f fall time CCC 35 CCC r d = 0.20 ? , see fig. 10 between lead,6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 5000 CCC v gs = 0v c oss output capacitance CCC 1800 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 880 CCC ? = 1.0mhz, see fig. 5 electrical characteristics @ t j = 25c (unless otherwise specified) nh i gss s d g l s internal source inductance CCC 5.0 CCC r ds(on) static drain-to-source on-resistance l d internal drain inductance CCC 2.0 CCC i dss drain-to-source leakage current ? downloaded from: http:///

www.irf.com 3 fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 120a d 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 4.0 6.0 8.0 10.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j downloaded from: http:///

4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 0 3 6 9 12 15 0 40 80 120 160 200 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 24v v = 15v i = 71a dsds d 0 2000 4000 6000 8000 10000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss fig 7. typical source-drain diode forward voltage 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j downloaded from: http:///

www.irf.com 5 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case
1 0.1 %
+ - 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 40 80 120 160 200 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///

6 www.irf.com fig 13a. basic gate charge waveform d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit q g q gs q gd v g charge fig 12c. maximum avalanche energy vs. drain current 0 300 600 900 1200 1500 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 15v i top 29a 50a bottom 71a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v downloaded from: http:///

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets ? ? ? ! "#$$ ? % &""& ? '(!" ? )"* ? '+!" &" downloaded from: http:///

8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2010 2x a 123 3x 0.25 [.010] b a b 4x 4 0.25 3.00 [.118] 2.50 [.099] 14.50 [.570] 13.00 [.512] 4.00 [.157] 3.50 [.138] 1.30 [.051] 0.90 [.036] 2.55 [.100] 1.00 [.039] 0.70 [.028] 5.00 [.196] 4.00 [.158] 11.00 [.433] 10.00 [.394] 1.50 [.059] 0.50 [.020] 15.00 [.590] 14.00 [.552] 9.00 [ . 8.00 [ . 13.50 [ 12.50 [

super-220 (to-273aa) part marking information top example: this is an irfba22n50a with assembly lot code 1789 assembly lot code international rectifier logo 89 irfba22n50a 17 year 7 = 1997 line c week 19 date code part number assembled on ww 19, 1997 in the assembly line "c" 719c note: "p" in assembly line position indicates "lead-free" notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///

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